发明名称 |
Electrostatic discharge protection device |
摘要 |
In one form of the invention, an Electrostatic Discharge protection device containing at least one heterojunction transistor is disclosed. In another embodiment, an Electrostatic Discharge protection circuit comprises: a first terminal contact 20; an NPN heterojunction bipolar transistor Q2; a PNP bipolar transistor Q1; a base-emitter shunt resistor R2; an emitter of said PNP transistor connected to said first terminal contact; a base of said PNP transistor connected to collector of said NPN transistor; a collector of said PNP transistor connected to a base of said NPN transistor; and an emitter of said NPN transistor connected to a second terminal contact 22, with said base-emitter shunt resistor connected between said base of said NPN transistor and an emitter of said NPN transistor, whereby a low-capacitance device capable of protecting semiconductor devices from electrostatic discharges in excess of 4000 Volts results. Other devices, systems, and methods are also disclosed.
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申请公布号 |
US5537284(A) |
申请公布日期 |
1996.07.16 |
申请号 |
US19940363140 |
申请日期 |
1994.12.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HAAS, JR., GLEN R.;NAGLE, THOMAS E. |
分类号 |
H01L27/04;H01L21/822;H01L21/8228;H01L27/02;H01L27/06;H01L27/082;H03K17/0812;(IPC1-7):H02H9/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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