| 摘要 |
In a semiconductor device, an input voltage is applied to a gate of a first MIS transistor of a first conductivity type and gates of second and third MIS transistors of a second conductivity type. The first MIS transistor is connected between a first power supply pad and an output node, the second MIS transistor is connected between the output node and a second power supply pad, and the third MIS transistor is connected between the output node and a third power supply pad.
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