| 摘要 |
PURPOSE: To shorten the product completion period after the order of a user, and to obtain an accurate multivalued level. CONSTITUTION: A semiconductor storage device has a plurality of MIS transistors T1 , T2 ...Ti Tn arrayed in one direction and a plurality of source wiring layers F1 , F2 ...Fj ...Fm supplied with mutually different potential V1 , V2 ...Vj ...Vm , and the source regions S1 , S2 ...Si ...Sn of a plurality of the MIS transistors are connected to the different source wiring layers respectively. |
