MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE ISOLATION

摘要

forming a pad oxide layer (2) and a polysilicon layer(3) on the silicon wafer(1); forming a first photoresist(4) pattern by exposing and developing process after depositing the first photoresist(4) on the polysilicon layer(3); forming a polysilicon pattern, a narrow trench(5') and a wide trench(5") by etching the revealed polysilicon layer, the pad oxide and the silicon wafer, and removing the first photoresist pattern; depositing a CVD oxide layer (6) thicker than the depth of the trench; depositing a second negative photoresist(7) on the CVD oxide layer and forming a second photoresist pattern(7A); revealing the polysilicon layer pattern by etching the CVD oxide layer; forming a CVD oxide pattern(6',6"); forming an isolation layer(10) with the CVD oxide pattern by removing the polysilicon layer pattern and the pad oxide pattern and the photoresist pattern.