| 摘要 |
A semiconductor device and method of fabricating the same is provided to increases the process margin of the process of manufacturing semiconductor and improves the noise margin. The semiconductor device comprises the cell core region(2000c), and peripheral power circuit(230p) and reservoir capacitor(280). The cell core region is arranged in the first area of the first semiconductor substrate(210). The cell core region has the word line the bit line and memory cells. Memory cells have semiconductor discrete devices. The peripheral power circuit and reservoir capacitors are arranged in the peripheral region(2000p). The peripheral power circuits are arranged in the second part of the first semiconductor substrate. The reservoir capacitor is arranged in the second semiconductor substrate(270). The second semiconductor substrate is located on the first semiconductor substrate. The reservoir capacitors are vertically positioned to the peripheral power circuits.
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