| 摘要 |
<p>PURPOSE: To accurately control the etching depth by forming an oxide film on a channel isolation region between a source electrode and a drain electrode. CONSTITUTION: In a thin film transistor 31, a gate electrode 33, a gate insulating film 34, a semiconductor layer 35, ohmic contact layers 36, 37, a source electrode 38, a drain electrode 39 and a protective layer 40 are sequentially laminated in this order on a substrate 32. An oxide film 42 is formed on a channel 41 part for isolating the layers 36 and 37 corresponding to the surfaces of the layers 36, 37 side of the layer 35. Accordingly, even if the channel formation for isolating the semiconductor layer and the contact layer at each single element and the channel isolation for isolating the contact layer corresponding to the source and drain electrodes are conducted in the same step, the progress of etching in the channel isolation region of the semiconductor layer is prevented by the oxide film.</p> |
