| 摘要 |
PURPOSE: To facilitate the manufacture and to improve the coupling between atoms in a junction boundary by alternately laminating a plurality of ultra-thin films of amorphous structure and a plurality of ultra-thin films of crystalline structure to form a superlattice. CONSTITUTION: A superlattice device 100 comprises an Si thin film 102 formed on a substrate 101. The film 102 is a superlattice in which a-Si thin films 103 and c-Si ultra-thin films 104 are alternately laminated. In the superlattice device 100, the superlattice is formed of Si of the same material. That is, the behavior as the superlattice is exhibited at the film 102 due to the difference between the band gaps of the film 103 and the other film 104. In the superlattice device 100, both the thin films are formed of the Si of the common material, the coupling between Si atoms in the boundary between the two layers is preferably conducted. |
