发明名称 Single in-line memory module
摘要 A full width single in-line memory module (SIMM) for dynamic random access memory (DRAM) memory expansions. A printed circuit board having a multiplicity of DRAM memory elements mounted thereto is arranged in a data path having a width of 144 bits. The SIMM further includes on-board drivers to buffer and drive signals in close proximity to the memory elements. In addition, electrically conductive traces are routed on the circuit board to reduce loading and trace capacitance to minimize signal skew to the distributed memory elements. The SIMM further includes a high pin density dual read-out connector structure receiving electrical traces from both sides of the circuit board for enhanced functionality. The SIMM is installed in complementary sockets one SIMM at a time to provide memory expansion in full width increments. Finally, symmetrical power and ground routings to the connector structure ensure that the SIMM cannot be inserted incorrectly, wherein physically reversing the SIMM in the connector slot will not reverse power the SIMM.
申请公布号 US5532954(A) 申请公布日期 1996.07.02
申请号 US19950473073 申请日期 1995.06.07
申请人 SUN MICROSYSTEMS, INC. 发明人 BECHTOLSHEIM, ANDREAS;FRANK, EDWARD;TESTA, JAMES;STORM, SHAWN
分类号 G06F12/06;G06F12/16;G11C5/00;H05K1/11;H05K1/14;H05K1/18;H05K3/40;(IPC1-7):G11C13/00 主分类号 G06F12/06
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