| 摘要 |
<p>A photoelectric conversion method for a photoelectric conversion device comprising a photoelectric conversion cell, as an individual single pixel, comprising a first transistor having a control electrode region consisting of a semiconductor of one conduction type, and first and second main electrode regions consisting of a semiconductor of opposite conduction type of said one conduction type, for outputting a signal from said first main electrode region based on carriers transferred to said control electrode region; a carrier storage region provided adjacent to said first transistor, consisting of a semiconductor of said one conduction type for storing carriers generated by light energy received; and a second transistor, with said carrier storage region and the control electrode region of said first transistor as the source and drain regions, for transferring carriers stored in said carrier storage region to the control electrode region of said first transistor. The photoelectric conversion method is characterized by including a reset operation for setting said carrier storage region and said control electrode region to the initial voltages by allowing said second transistor to conduct; a storage operation for storing carriers generated by light illumination in said carrier storage region; an operation for transferring carriers stored in one of said carrier storage regions to said control electrode region, by allowing one of said second transistors to conduct; and a reading operation for reading the voltage of said control electrode region determined by transferred carriers. <IMAGE></p> |
