| 摘要 |
PURPOSE: To provide a monolithic integrated circuit which utilizes unused element regions effectively for wiring and improve high-frequency characteristics. CONSTITUTION: Sets of active elements 2, capacitor electrodes 6, and resistance elements 21, are formed in an array on a semiconductor substrate 1 to form a common substrate. A ground conductor 25 is formed thereon with a dielectric film 23 in between. A dielectric film 28 1μm or thicker is formed on the grounding conductor 25, and traces 29 are formed on the dielectric film 28. These traces 29 and the active elements 2 on the substrate 1 are connected with each other by through holes 31, the holes 24 in the dielectric film 23, and the openings 26 in the ground conductor 25 to form a circuit. The openings 26 are formed direct above the active elements used in that circuit.
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