| 摘要 |
PURPOSE: To perform the complete phase-matching processing of laser wave fronts while eliminating the phase differences among the outputs of many semiconductor laser parts, by providing specific 1/2 wavelength phase variation films on the output end surfaces of the semiconductor laser parts and the end surfaces of their guides. CONSTITUTION: On the output end surfaces of semiconductor laser parts 21b, 21d, 1/2 wavelength phase variation films 23a, 23b are provided. For a laser beam, each of the 1/2 wavelength phase variation films 23a, 23b is made to satisfy the relation of d=λ/ 2(n-1)} (d: the thickness of the 1/2 wavelength phase variation film.λ: the wavelength of the laser beam, n: the refractive index of the 1/2 wavelength phase variation film). Thereby, the phases of the output laser beams 31, 33 outputted from the semiconductor laser parts 21b, 21d are varied respectively by 1/2 wavelengths in comparison with the phases of amplified laser beams 27a, 27b which hereafter pass through the phase variation films 23a, 23b respectively. Therefore, the characteristics of the electric fields E of output laser beams 30-34 outputted from semiconductor laser parts 21a-21e can be so improved as to be nearly in phase.
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