| 摘要 |
PURPOSE: To provide a means to selectively grow a semiconductor layer having a necessary length and uniform thickness distribution without lengthening a mask pattern, by applying a comparatively simple process to the mask pattern. CONSTITUTION: By using mask patterns M1 , M2 on a semiconductor substrate Sub, a semiconductor layer is selectively vapor-grown on stripe parts Sn, Sw. In this manufacturing method of a semiconductor device, unevenness MR like rectilinear, curved protruding stripes is formed, and anisotropy is imparted to the effective diffusion length of semiconductor raw material on the mask pattern to control element structure. As a method for forming unevenness in at least a part of the mask pattern, the following are adopted: a method a surface of a side which are not smooth is brought into contact with the mask pattern surface and pressed, and in this state, both of them are relatively moved, or a method wherein the unevenness is formed on the mask pattern surface by photolithography technique using interference exposing method. |
