| 摘要 |
<p>PURPOSE: To prevent alloying of metals and to form a good pattern by means of chemical etching by forming a barrier layer on the interface of metals in the laminated metal films. CONSTITUTION: Alloying of metals between laminated metal films 1, 2, for example, alloying of metals after patterning metal laminated films and before the etching process, is prevented by forming a barrier layer 3 to prevent diffusion of atoms of both metals on the interface of metal films 1, 2 to be laminated. It is preferable to form the barrier layer 3 of an oxide or nitride of metals 1, 2 which constitute the laminated films. However, because the oxide or nitride film of metals 1, 2 has insulating property, the barrier layer 3 is preferably formed to 1 to 5nm thickness so as not to deteriorate the electric characteristics required as a wiring material. Further, after the pattern forming process is completed, the oxide or nitride film of the barrier layer 3 may be heat treated to decrease the electric resistance.</p> |
