| 摘要 |
<p>PURPOSE: To provide a sample holding method for a plasma treatment apparatus in which a sample in a vacuum is hardly damaged or no damage is caused to elements inside a substrate and the transfer time is not too long. CONSTITUTION: When a sample 50 is subjected to plasma treatment, the sample is electrostatically attracted and hold on a sample table in a vacuum treatment chamber 10 by applying a DC voltage, and a heat transmitting gas is supplied to between the rear surface of the sample 50 and sample table, then a treatment gas is changed into plasma by applying a high-frequency electric power to the chamber 10 so as to treat the sample by plasma. When the plasma treatment is completed, the supply of the heat transmitting gas is stopped and the application of DC current for electrostatic suction is stopped, then the application of high-frequency electric power for generating plasma is stopped. Thus, the sample can be prevented from jumping up due to the pressure of the heat transmitting gas and the electrostatic attracting force remaining in the sample be also eliminated, further the sample can be released easily from the sample table, resulting in easy transfer.</p> |
