发明名称 |
Circuit configuration for gentle shutoff of an MOS semiconductor component in the event of excess current |
摘要 |
In a circuit configuration for the shutoff of a semiconductor component in the event of excess current, the semiconductor component has gate and cathode terminals and is controlled by the field effect. A controllable switch is connected between the gate and cathode terminals and is made conducting by a control signal. A device controls the controllable switch to a range of high on-state DC resistance when there is excess current and a shutoff signal is simultaneously present.
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申请公布号 |
US5526216(A) |
申请公布日期 |
1996.06.11 |
申请号 |
US19940304084 |
申请日期 |
1994.09.09 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KONRAD, SVEN;REINMUTH, KLAUS;STUT, HANS |
分类号 |
H03K17/04;H03K17/08;H03K17/082;H03K17/16;H03K17/56;(IPC1-7):H02H9/02 |
主分类号 |
H03K17/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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