| 摘要 |
A semiconductor integrated circuit comprises a signal input terminal, a power supply voltage terminal to which a power voltage is applied, a reference voltage terminal to which a ground voltage is applied, a first PMOS transistor having a drain, a gate connected to the signal input terminal, and a source connected to the power supply voltage terminal, a second PMOS transistor having a gate and a drain being mutually connected to each other, and a source connected to the drain of the first transistor, a third PMOS transistor having a gate connected to the drain of the second transistor, a source connected to the power supply potential terminal, and a drain connected to the drain of the first transistor, an NMOS transistor having a gate connected to the power supply voltage terminal, a drain connected to the drain of the second PMOS transistor, and a source connected to the reference voltage terminal, an internal circuit connected to the drain of the NMOS transistor, a first overvoltage absorption element, connected between the reference voltage terminal and the signal input terminal, for absorbing an overvoltage applied to the signal input terminal, and a second overvoltage absorption element, connected between the signal input terminal and the power supply voltage terminal, for absorbing an overvoltage applied to the signal input terminal.
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