| 摘要 |
PURPOSE: To realize an ion sensor capable of reducing or eliminating measurement error generated from a resin coated with an ion selective film. CONSTITUTION: Constituted are of a base 21, a metal sintered film 22 formed on the base 21, electric field effect transistor 23 whereat a gate 23G is connected with the metal sintered film 22, ion selective film 24 covering the surface of the metal sintered film 22 and a resin 27 covering the metal sintered film or the electric field effect transistor 23 including whole periphery or most of periphery so as to expose the ion selective film 24. |
