| 摘要 |
PURPOSE: To suppress the change of a reverse bias voltage to a gate electrode due to a rectified current by connecting high impedance line parallelly to the terminating resistors of plural stages between a ground pattern on a dielectric substrate and one end of a microstrip line. CONSTITUTION: The microstrip line 2 of a three-layer structure whose characteristic impedance is 50Ω is arranged on the dielectric substrate 8 made of alumina ceramics whose relative dielectric constant is 9.7 and the microstrip line 2 is grounded from a through-hole 7 to metal on the back surface of the dielectric substrate 8 through the terminating resistors 3 of two-stage constitution of respectively 50Ω. Then, the high impedance line 9 is formed in the same layer structure as the microstrip line 2 parallelly to the terminating resistor closer to a ground side among the terminating resistors 3 of the two-stage constitution. Thus, the rectified current which is a DC component is not made to flow to the terminating resistors 3 and a voltage effect by it is not generated. Also, since a high frequency component which is an AC component is consumed in the terminating resistors 3, reflection is suppressed and this non-reflection terminating circuit of a wide band is obtained. |
