| 摘要 |
PURPOSE: To protect a wiring against oxidation caused by ashing of resist by a method wherein a substrate is cooled down, an ashing operation is carried out under a low-oxygen partial pressure, the substrate is reduced as exposed to a reducing atmosphere after an ashing operation is executed in an ashing process carried out for removing resist from a copper wiring or a copper laminated wiring. CONSTITUTION: An upper electrode 22 and a substrate holder 23 are arranged in parallel with each other in a vacuum chamber 21. A cooling gas inlet pipe 25 is connected to the center of the substrate holder 23. In an ashing operation, Ar gas or the like is introduced into the inlet pipe 25 from outside. A vacuum chamber 21 is exhausted by a vacuum pump through an exhaust pipe 26. Oxygen is capable of being introduced into the vacuum chamber 21 through the inlet pipe 25 together with cooling gas when an ashing operation takes place. A reducing gas is introduced through a feed pipe 28. A resist ashing operation is carried out cooling a substrate below a temperature of 100 deg.C, whereby resist left after etching is removed. It is preferable that oxygen of partial pressure 0.1 to 10Torr is fed while an ashing operation is carried out. |
