PROCESS AND DEVICE FOR SUBLIMATION GROWING SILICON CARBIDE MONOCRYSTALS

摘要

A reaction chamber (2) is surrounded by a gas-tight wall (20) of which at least the inner side (21) that faces the reaction chamber (2) is made of silicon carbide produced by a CVD process. At least part of the silicon carbide that constitutes the wall (20) is sublimated and grown as a silicon carbide monocrystal (4) on a crystal seed (3).