发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A FERROELECTRIC MESEMICONDUCTOR DEVICE COMPRISING A FERROELECTRIC MEMORY ELEMENT WITH A LOWER ELECTRODE PROVIDED WITH MORY ELEMENT WITH A LOWER ELECTRODE PROVIDED WITH AN OXYGEN BARRIER AN OXYGEN BARRIER |
摘要 |
The invention relates to a semiconductor device comprising a semiconductor body (3) with a semiconductor element (1) with an electrically conducting region (5) on which a capacitor (2) forming a memory element is present with a lower electrode (11), an oxidic ferroelectric dielectric (12), and an upper electrode (13), which lower electrode (11) makes electrical contact with the conducting region (5) and comprises a layer with a conductive metal oxide (112) and a layer (111) comprising platinum. The layer with the conductive metal oxide (112) acts as an oxygen barrier during manufacture. The invention also relates to a method of manufacturing such a semiconductor device. According to the invention, the device is characterized in that the layer comprising platinum (111) contains more than 15 atom % of a metal capable of forming a conductive metal oxide, and in that the layer (112) with the conductive metal oxide is present between the layer (111) comprising platinum and the ferroelectric dielectric (12). A good electrical contact between the lower electrode (11) and the conducting region (5) after manufacture is achieved thereby. |
申请公布号 |
WO9610845(A3) |
申请公布日期 |
1996.06.06 |
申请号 |
WO1995IB00799 |
申请日期 |
1995.09.26 |
申请人 |
PHILIPS ELECTRONICS N.V.;PHILIPS NORDEN AB |
发明人 |
WOLTERS, ROBERTUS, ADRIANUS, MARIA;KEMPERMAN, JOHANNA, HENRIKA, HELENA, MARIA |
分类号 |
H01L21/8247;H01L21/28;H01L21/8242;H01L27/10;H01L27/108;H01L27/115;H01L29/43;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|