| 发明名称 |
PRODUCTION OF SPUTTERING TARGET MATERIAL FOR FORMING THIN ITO FILM HAVING HIGH STRENGTH |
| 摘要 |
PURPOSE: To produce a sputtering target material for forming a thin ITO film having high strength. CONSTITUTION: A compact of ITO powder consisting of tin oxide and indium oxide is sintered in an active oxidizing atmosphere obtd. by adding 0.01-5vol.% one or more among H2 O2 , .OH and .O2 to an oxidizing atmosphere to produce the objective sputtering target material. |
| 申请公布号 |
JPH08144056(A) |
申请公布日期 |
1996.06.04 |
| 申请号 |
JP19940312450 |
申请日期 |
1994.11.22 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
TAKASHINA HIROYUKI |
| 分类号 |
C04B35/00;C04B35/457;C04B35/495;C04B35/64;C23C14/08;C23C14/34;H01B13/00 |
主分类号 |
C04B35/00 |
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