发明名称 |
TEMPERATURE STABILIZED SELECTIVE RADIATION MATERIAL |
摘要 |
PURPOSE: To obtain a temperature stabilized selective radiation material using upper air or cosmic space as a cryogenic source by forming a vanadium dioxide film to which tungsten is added on a black substrate and forming a silicon monoxide film thereon. CONSTITUTION: This selective radiation material is formed by providing the vanadium dioxide film 2 to which tungsten is added on the upper surface of the black substrate 1 made of an aluminum coated with a black paint and forming the silicon monoxide film 3 thereon. The thickness of the film 2 is about 0.1μm, the thickness of the film 3 is about 1μm and the thickness of the substrate 1 is not restricted if not transmissive to infrared rays. The selective radiation material is mitigated in sensitive film thickness dependency and attains a fixed stable temp. lowering.
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申请公布号 |
JPH08144068(A) |
申请公布日期 |
1996.06.04 |
申请号 |
JP19940307029 |
申请日期 |
1994.11.16 |
申请人 |
AGENCY OF IND SCIENCE & TECHNOL |
发明人 |
KIN TAIRA;TANEMURA SAKAE |
分类号 |
F25B23/00;B32B7/02;B32B9/00;C23C14/08;C23C28/04;C23C30/00;G02B5/28;(IPC1-7):C23C28/04 |
主分类号 |
F25B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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