| 摘要 |
<p>PURPOSE: To provide a forming method of electrodes for an SiC capable of ohmic junction having excellent electric characteristics as well as forming Schottky junction. CONSTITUTION: The forming method contains the steps A, B, C, of forming metallic electrode layer M on the surface of silicon carbide SiC crystalline substrate 10 as well as carbonizing steps D, E of converting this metallic layer M into electrode layer 14 of metallic carbide by externally feeding carbon from SiC crystalline substrate as well as the heating step of the SiC crystalline substrate 10 whereon the electrode layer 14 made of this carbonized metal is formed.</p> |
