发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE: To shorten the self refresh reset time. CONSTITUTION: When a self refresh determination signalϕSR* is asserted to Low level, row decoders in memory mat parts MM1-MM4 to be self refreshed are activated sequentially and selectively. When the self refresh determination signal is negated, the selective activation is interrupted and a transition is made to normal operation mode. Since the self refresh can be reset without waiting the end of self refresh for all memory mat parts MM1-MM4, the refresh reset time can be shortened.
申请公布号 JPH08138373(A) 申请公布日期 1996.05.31
申请号 JP19940295759 申请日期 1994.11.04
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 SUGITA SUSUMU;SAKAI HIROYUKI;YOSHIDA HIROSHI;SHIRAISHI IORI;YAMAGATA AKIO;NOJIMA KAZUYA;OSAKABE TOSHIAKI;SAWA KENICHI
分类号 G11C11/403;G11C11/406;(IPC1-7):G11C11/403 主分类号 G11C11/403
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