发明名称 |
Verfahren zur Herstellung einer Halbleiterspeicherstruktur unter Verwendung einer phasenverschiebenden Maske |
摘要 |
A semiconductor memory structure (Figure 6A) comprises a pattern layer having a plurality of elemental patterns, and another pattern layer having, in a single cell or adjacent cells, more than one pair of element patterns including mutually proximate parallel portions, and is formed using a phase shifting mask having a light shielding region (10), light transmitting portions (12) and phase shifting films (11) on a substrate (1) transparent to the wavelength of exposure light, wherein the light transmitting portions (12) and the phase shifting films (11) form pairs each including mutually proximate parallel portions. |
申请公布号 |
DE69026689(D1) |
申请公布日期 |
1996.05.30 |
申请号 |
DE1990626689 |
申请日期 |
1990.11.13 |
申请人 |
SONY CORP., TOKIO/TOKYO, JP |
发明人 |
KONISHI, MORIKAZU, C/O PATENTS DIVISION, SHINAGAWA-KU TOKYO 141, JP;SHIMIZU, HIDEO, C/O PATENTS DIVISION, SHINAGAWA-KU TOKYO 141, JP |
分类号 |
G03F1/08;G03F1/29;G03F1/68;H01L21/027;H01L21/8244;H01L27/11;(IPC1-7):H01L27/11;H01L27/02;H01L21/82 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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