发明名称 |
Semiconductor device having a silicon oxide film containing fluorine atoms |
摘要 |
The semiconductor device has a multilayer structure wherein a substantially pure silicon dioxide film containing substantially no fluorine atom and a silicon dioxide film containing fluorine atoms are sequentially laminated on a substrate. Etching rate of a silicon dioxide film depends on a fluorine concentration in the film, so that a suitable etch selectivity of the silicon dioxide film containing fluorine atoms from the substantially pure silicon dioxide film can be obtained to form an oxide trench used for a trench interconnection and a via-hole used for a via-plug. The oxide film containing fluorine atoms has as good a quality as the silicon dioxide film not containing impurities has, thereby obtaining a superior characteristic of the semiconductor device. Addition of fluorine atoms reduces a specific permittivity to thereby obtain a higher speed.
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申请公布号 |
US5521424(A) |
申请公布日期 |
1996.05.28 |
申请号 |
US19940361536 |
申请日期 |
1994.12.22 |
申请人 |
NEC CORPORATION |
发明人 |
UENO, KAZUYOSHI;HOMMA, TETSUYA |
分类号 |
H01L21/302;H01L21/3065;H01L21/316;H01L21/336;H01L21/768;H01L23/522;H01L23/532;H01L29/78;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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