| 摘要 |
To increase the overlap margin in DRAM, the method forms the 8 strapping metal line(1A or 1H) as one pitch, and relates a line connected at X-decoder with strapping metal line(1A,1D,1F,1H) contacted with metal line(2A,2D,2F,2H) using via-contact(4) and strapping metal line(1C,1B,1E,1G) with ploy line(2C,2B,2E,2G) using metal contact(5). There by the overlap margin is increased to 0.35 Pm.
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