| 摘要 |
PURPOSE: To improve the utilization factor of In and to reduce cost in producing a solar cell using CuInSe2 as an absorption layer. CONSTITUTION: A dispersed plating solution is prepared by adding 1mol citric acid into a solution containing 0.5mol Cu ion, 0.5mol In ion and 0.633mol Se powder. A CuIn/Se dispersed plated layer 3 is formed by plating using a glass plate 1, on which an MO film 2 is formed, as a cathode at 3A/dm<3> current density. The composition of the plated layer 3 is regulated to Cu:In:Se=31.5:30.8:37.7. The data expresses that the utilization factor of In is increased 5-fold by adding citric acid. This is due to the reason that citric acid forms complex ion with Cu, In and the value of reduction potential approaches. Tartaric acid can be used in place of citric acid. The plated layer 3 is converted to the CuInSe2 film 4 by being heat-treated in an atmosphere containing gaseous Se. |
