Verfahren zum Herstellen einer Halbleitervorrichtung.
摘要
A method of manufacturing a semiconductor device comprises the steps of performing selective vapor growth (ST1) on a semiconductor substrate (1), and polishing (ST2) a surface of an insulative film (3C) formed on said semiconductor substrate (1) subsequent to the selective vapor growth step (ST1).
申请公布号
DE69023685(T2)
申请公布日期
1996.05.09
申请号
DE1990623685T
申请日期
1990.04.05
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
OGINO, MASANOBU, C/O INTELLECTUAL PROPERTYDIV., MINATO-KU, TOKYO 105, JP
