Field emission devices employing enhanced diamond field emitters

摘要

Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds -- diamonds grown or treated to increase the concentration of defects -- have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm<-><1> broadened by a full width at half maximum DELTA K in the range 5-15cm<-><1> (and preferably 7 - 11 cm<-><1>). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm<2> or more at a low applied field of 25 V/ mu m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 mu m in diameter at fields of 15 V/ mu m or less.