| 摘要 |
A high-frequency lateral PNP transistor presenting a base region (63') laterally delimited by P type emitter (68) and collector (69) regions, and at the top by a surface portion (67) of the N type semiconductor body (63) housing the active area of the transistor. The surface portion (67) delimiting the base region (63') presents no formations of insulating material grown across the surface, so that the width (WB) of the base region (63') is reduced and ensures optimum dynamic characteristics of the transistor. The base contact (80, 82) may be located directly over the surface portion facing the base region (63'), to reduce the extrinsic base resistance and overall size of the device, or it may be located remotely and connected to the base region by a buried layer (62) and sinker region (88) to further reduce the base width. <IMAGE> |
