| 摘要 |
<p>A magnetic multilayer device (1) comprising two layers (3, 5) of magnetic material which are separated by an interposed layered structure comprising a resonant-tunneling double-barrier structure (RTDBS) (7). In such a device (1), exchange coupling between the magnetic layers (3, 5) can be modified by subjection of the RTDBS (7) to an electric field. In this way, the configuration of the magnetisations (M1, M2) in the magnetic layers (3, 5), and thus the net magnetic flux generated by the device (1), can be electrically adjusted. The device (1) can be applied inter alia in a magnetic recording head.</p> |
