发明名称 |
Sensor mfr. for large magnetoresistive effect sensor elements |
摘要 |
The sensor arrangement includes four pairs of bridge elements in two parallel switched bridge branches. At least one bridge element exhibits a large magneto-resistive effect. Individual elements have different magnetic field sensitivities. All the elements are formed next to each other on one substrate (2). The substrate (2) has a carrier structure (8) and a coating (9). Three layers form a bias layer system. A lift-off technique is used to remove a structured varnish layer on the coating (5,9). The bridge elements (E11,E12,E21,E22) are adjacent each other on the substrate.
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申请公布号 |
DE4434912(A1) |
申请公布日期 |
1996.04.18 |
申请号 |
DE19944434912 |
申请日期 |
1994.09.29 |
申请人 |
SIEMENS AG, 80333 MUENCHEN, DE |
发明人 |
BERG, HUGO VAN DEN, DR., 91074 HERZOGENAURACH, DE |
分类号 |
G01R33/09;H01L43/08;(IPC1-7):G01R33/09;G01R17/10;H01F10/00 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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