发明名称 Sensor mfr. for large magnetoresistive effect sensor elements
摘要 The sensor arrangement includes four pairs of bridge elements in two parallel switched bridge branches. At least one bridge element exhibits a large magneto-resistive effect. Individual elements have different magnetic field sensitivities. All the elements are formed next to each other on one substrate (2). The substrate (2) has a carrier structure (8) and a coating (9). Three layers form a bias layer system. A lift-off technique is used to remove a structured varnish layer on the coating (5,9). The bridge elements (E11,E12,E21,E22) are adjacent each other on the substrate.
申请公布号 DE4434912(A1) 申请公布日期 1996.04.18
申请号 DE19944434912 申请日期 1994.09.29
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 BERG, HUGO VAN DEN, DR., 91074 HERZOGENAURACH, DE
分类号 G01R33/09;H01L43/08;(IPC1-7):G01R33/09;G01R17/10;H01F10/00 主分类号 G01R33/09
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