Housing for semiconductor device and method of manufacturing

摘要

Disclosed is a housing for a semiconductor device improved not to cause thermal distortion. The housing is formed on an A l -Si compound material and includes a housing member having a space for housing the semiconductor device. Occlusion gas contained in the A l -Si compound material is removed such that at least nitrogen gas in the occlusion gas is 0.1 percentage by weight or less. Since the housing member contains no occlusion gas, the housing cause no thermal distortion even though heat is applied thereafter.