发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device is disclosed, which is supplied with power from a power supply and which includes memory cells and a sense amplifier connected to the cells via bit lines. The memory device further includes a circuit for enabling the sense amplifier in response to a supplied enable signal, and for allowing the sense amplifier to rewrite cell data, read on the bit lines, into the memory cell again in self-refresh mode. The enabling circuit incorporates a noise suppression circuit which suppresses rapid changes in an operation current flowing between the power supply and the sense amplifier in order to minimize power supply related noise.
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申请公布号 |
US5508965(A) |
申请公布日期 |
1996.04.16 |
申请号 |
US19940305722 |
申请日期 |
1994.09.14 |
申请人 |
FUJITSU LIMITED;FUJITSU VLSI LIMITED |
发明人 |
NOMURA, HIDENORI;NAGAI, KENJI;NAKASHIMA, MASAMI;YAMAMOTO, HIROSHI;SOBUE, ISAYA |
分类号 |
G11C7/06;G11C11/406;G11C11/4091;(IPC1-7):G11C7/02 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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