| 摘要 |
PURPOSE: To form a thin film terminal electrode with high productivity while shortening the time required for the thin film formation process and enhancing the bonding strength of the thin film with respect to a bare chip. CONSTITUTION: When thin film terminal electrodes 15 are formed at the opposite end parts of an element of chip capacitor 10, chip thermistor, chip resistor, chip inductor or chip LC filter, i.e., a bare chip 11 of sintered ceramic, thin films 16, 17, 18 are formed at the opposite end parts of the bare chip 11 by vapor phase method in an inert gas under vacuum pressure at room temperature and then the bare chip 11 is heat treated in a reductive atmosphere. |
