| 摘要 |
PURPOSE: To maintain multilayered wiring of high reliability, by changing the material of a lower layer wiring and an upper layer wiring, from the crystalline state and the polycrystalline state to the single-crystal state via the amorphous state, by increasing and decreasing the temperature. CONSTITUTION: A first wiring 6 composed of crystalline state material is formed on the surface of a substrate, and a first insulating film 7 is formed on the wiring 6. A connection hole 8cont which reaches the wiring 6 is formed. A conductive film composed of polycrystalline material is formed on the insulating film 7. By working the conductive film, a second wiring 9 is formed, on which a second insulating film 10 is formed. The surface of the insulating film 10 is retreated until the surface of the wiring 9 is exposed. The insulating films 7, 10 are etched, and an aperture part 8open which reaches the wiring 6 is formed. The temperature is raised in order to change the material of the wiring 6 from the crystalline state to the amorphous state, and to change the material of the wiring 9 from the polycrystalline state to the amorphous state. After that, by decreasing the temperature to obtain a supercooling state, the wirings 6, 9 are turned into wirings 6, 9 composed of single-crystal material. |
