MANUFACTURE OF HIGH DENSE MOS TYPE ELECTRIC POWER DEVICE ANDHIGH DENSE TYPE ELECTRIC POWER DEVICE MANUFACTURED BY ITS METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of highly integrated MOS power device. SOLUTION: Insulating gate layers 8 and insulating layers 11 are formed on a semiconductor layer 2, next to a plurality of slender windows having long edges 17 and short edges sectioning respectively exposed surface fine strips 16 are formed by selectively removing layers 8 and 11. Then the slender windows are implanted with a first dopant vertically thereto and perpendicularly to the layer 2 so as to be symmetrically tilted at the surface of the layer 2 making an angle. These angles depending upon the gross thickness of the layers 8 and 11 for preventing the first dopant from being implanted into the central fine strips of the fine strips 16 to form the pairs of source regions 6 extending along the edges 17 of respective windows, also separated by the central fine strips further symmetrically tilted making another angle to be implanted with a second dopant to form respective regions with two channel regions 5, extending to the under side of the long edges of respective windows finally implanted with a third dopant to form the regions aligned with the edges 17 of the windows using the layers 11 as masks.