发明名称 Method for depositing a layer on a substrate wafer with a sputtering process
摘要 A method for depositing a layer on a substrate is disclosed wherein a collimator having cylindrical holes is employed to reduce the lateral component of a particle flux. The cylindrical holes are aligned to be perpendicular to a substrate wafer and have a variety of radii such that the hole radii are smaller in regions having a higher vertical component of particle flux than in regions which have a lower vertical component of the particle flux.
申请公布号 US5505833(A) 申请公布日期 1996.04.09
申请号 US19940272589 申请日期 1994.07.11
申请人 发明人
分类号 C23C14/34;H01J37/32;(IPC1-7):C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址