| 摘要 |
In the manufacturer of integrated circuits, an undope d wide band-gap semiconductor is used for the insulating layer to isolate the silicon substrate from the metal interconnection pattern. To provide vias through the insulating layer for connection to the source and drain of the transistors of the circuit, the wide band-gap semiconductor is implanted with a dopant selectively in the portion overlying the source and drain for making the implanted portion of low resistivity and of the conductivity type of the source and drain. Preferably, carbon is the wide band-gap semiconductor and nitrogen is the dopant implanted. This invention relates to the fabrication of integrated circuit devices. |
