| 摘要 |
PCT No. PCT/JP91/01205 Sec. 371 Date Jul. 9, 1993 Sec. 102(e) Date Jul. 9, 1993 PCT Filed Sep. 11, 1991 PCT Pub. No. WO92/05578 PCT Pub. Date Apr. 2, 1992.In manufacturing a semiconductor device, when a SORI limit value of a silicon single crystal wafer to be material in manufacturing devices, and a bulk micro defect density are defined in fixed ranges for said wafer, as required by the device yield and the gettering capability, said wafer having an initial oxygen concentration capable of simultaneously satisfying said fixed ranges is subject to a preheat treatment for the formation of an oxygen precipitate nucleus by using a time capable of simultaneously satisifying a fixed range between the upper and lower limit values of said initial oxygen concentration and the fixed range of said bulk micro defect density. Use of the process of the present invention will make it possible that the SORI of a wafer is limited to its lowest extent, and a combination of a variety of conditions for insuring the BMD density required for exertion of a desired gettering capability is efficiently chosen in a short period of time without relying upon trial and error.
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