发明名称 MOS-type semiconductor device and method for making the same
摘要 <p>A semiconductor device includes an insulating support. A strip of semiconductor material has two ends in contact with the insulating support and a midsection extending between the ends. A dielectric layer encircles the midsection, and a conductive layer encircles the dielectric layer. The conductive layer has a substantially constant width such that a gate electrode formed within the conductive layer is fully self-aligned with drain and source regions formed within the ends. &lt;IMAGE&gt;</p>
申请公布号 EP0704909(A2) 申请公布日期 1996.04.03
申请号 EP19950306521 申请日期 1995.09.15
申请人 STMICROELECTRONICS, INC. 发明人 CUNNINGHAM, JAMES A.
分类号 H01L21/265;H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L29/786;H01L21/28 主分类号 H01L21/265
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