发明名称 |
Micromechanical accelerometer and method of manufacture thereof |
摘要 |
A high precision micromechanical accelerometer comprises a layered structure of five (5) semiconductor wafers insulated from one another by thin semiconductor material oxide layers. The accelerometer is formed by first connecting a coverplate and a baseplate to associated insulating plates. Counter-electrodes, produced by anisotropic etching from the respective insulating plates, are fixed to the coverplate and the baseplate respectively. The counter-electrodes are contactable through the cover or baseplate via contact windows. A central wafer contains a unilaterally linked mass (pendulum) that is also produced by anisotropic etching and which serves as a movable central electrode of a differential capacitor. The layered structure is hermetically sealed by semiconductor fusion bonding. A stepped gradation from the top is formed at a wafer edge region for attaching contact pads to individual wafers to permit electrical contacting of individual wafers. The invention permits fabrication of a mu B device characterized by extremely small leakage capacitances and high temperature stability.
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申请公布号 |
US5504032(A) |
申请公布日期 |
1996.04.02 |
申请号 |
US19940224750 |
申请日期 |
1994.04.07 |
申请人 |
LITEF GMBH |
发明人 |
GESSNER, THOMAS;HAFEN, MARTIN;HANDRICH, EBERHARD;LEINFELDER, PETER;RYRKO, BRUNO;VETTER, EGBERT;WIEMER, MAIK |
分类号 |
G01P15/08;G01P15/125;H01L21/306;H01L29/84;(IPC1-7):H01L21/76 |
主分类号 |
G01P15/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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