| 摘要 |
PURPOSE: To simply and rapidly detect the presence and the quantity of a carrier trap despite the omission of measuring a spectral sensitivity curve by irradiating a semiconductor P-N junction element with weak white light, and detecting the change of the spectral sensitivity characteristics of the element by measuring current-voltage characteristics. CONSTITUTION: Minority carrier trap of a semiconductor P-N junction element 5 is evaluated according to the change of the spectral sensitivity characteristics of the element 5. In such a method for evaluating the element 5, the change of the characteristics of the element 5 is detected by irradiating the element 5 of a dark state with weak white light 2, and measuring the current-voltage (Δi-V) characteristics of the element 5 by the light 2. For example, the light 2 of about 0.2mW/cm<2> is emitted to a sample 5 via an optical chopper 3, and the DC current-voltage (I-V) and the output current-voltage (Δi-V) characteristics by the light 2 are measured. |
