| 摘要 |
PURPOSE: To reduce gate leak currents by forming a second semiconductor layer, where the wavelength vector to become the lower end of the energy level of a conduction band is different from the wavelength vector to become the lower end of the energy level of the conduction band of a first semiconductor layer, on the surface of the first semiconductor layer. CONSTITUTION: Three layers are made by catching both sides of a nondoped Al0.3 Ga0.7 As layer (Γlayer) 1 with nondoped Al0.75 Ga0.24 As layer (X layers). The energy level of a conduction band is higher on the side of the center Player than on the side of the X layers 2 and 3 on both sides. The electrons advancing from the X layer 2 to theΓlayer 1 sense the discontinuity of effective energy level larger than the difference of the energy level of the conduction bands of both layers. Moreover, for the conductive electrons in the X layer 2 to enter the level of the lower end of the conduction band of theΓlayer 1, the mutual action with phonons becomes necessary. A current not less than the current being expected from the difference between the energy levels of the conduction band flows.
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