| 摘要 |
An address decoder for repair of a memory device including a conductive line being applied with a desired voltage and a plurality of repair links connected to the conductive line, the repair links being arranged adjacent to each other or one another by a predetermined number at their predetermined portions so that one or more of them can selectively be blown by once scanning of a laser beam. According to the invention, the number of times that the links are blown by the laser beam is significantly reduced, resulting in a reduction in the working time required in repairing a failed cell column using the laser beam. This has the effect of enhancing the working efficiency and reducing the probability that the repair is failed.
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