发明名称 Method for fabricating a CCD image sensor with active transistor pixel
摘要 An image sensor element having at least one charge storage well 70 and 80, charge transfer structures for transferring charge from one charge storage well 70 to another charge storage well 80, and a charge sensor for sensing charge levels in a charge storage well 70 without removing the charge from the well. Other devices, systems and methods are also disclosed.
申请公布号 US5500383(A) 申请公布日期 1996.03.19
申请号 US19950412820 申请日期 1995.03.29
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HYNECEK, JAROSLAV
分类号 H01L27/148;G11C27/04;H01L21/339;H01L29/762;(IPC1-7):H01L21/04;H01L21/265 主分类号 H01L27/148
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