| 发明名称 |
Semiconductor device having a planarized surface |
| 摘要 |
An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 mu m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.
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| 申请公布号 |
US5500558(A) |
申请公布日期 |
1996.03.19 |
| 申请号 |
US19940298296 |
申请日期 |
1994.08.31 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HAYASHIDE, YOSHIO |
| 分类号 |
H01L21/3205;H01L21/304;H01L21/306;H01L21/3105;H01L21/768;H01L23/52;(IPC1-7):H01L21/321;H01L23/522 |
主分类号 |
H01L21/3205 |
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