| 摘要 |
<p>PURPOSE: To achieve the fining of the emitter of a vacuum micro-element by making the width of the emitter adjustable in a manufacturing process. CONSTITUTION: A first SiO2 film 12 is formed in the surface 11a of a semiconductor substrate 11. After that, an opening part 12a is formed in the film 12. Further, a first WSi film 13 is formed as a metal film for an emitter so as to cover the surface 11a of the substrate 11 exposed from the opening part 12a and the film 12. Next. the part other than the part to cover the side wall 12b of the opening part 12a of the film 12 of a film 13 is removed. Next, an SiO2 film is formed so as to cover the parts 13a, 13b in which the film 12 is removed. Further, a WSi film 15 is formed as a metal film for a gate so as to cover a film 14. Further, a resist layer 16 is formed as a protective film so as to cover the film 15. Next, the layer 16 is etched back so as to cover the part other than the parts 15a, 15b planned to be opened within the film 15. The parts l5a, 15b of the film 15 are dry-etched by adopting the layer 16 as a mask. After that, the film 14 is etched by using the film 15 as a mask to expose the films 13a, 13b which make an electron emitting emitter.</p> |
